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DXTA92

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DXTA42)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking & Type Code Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

NEW PRODUCT

SOT89-3L

2,4

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-300 V

Collector-Emitter Voltage

CEO

-300 V

Emitter-Base Voltage

EBO

-5 V

Continuous Collector Current

-500 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

= 25°C P

1 W

Thermal Resistance, Junction to Ambient (Note 3)

125 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

(BR)CBO

-300

⎯ ⎯

= -100μA, I

= 0

Collector-Emitter Breakdown Voltage

(BR)CEO

-300

⎯ ⎯

= -1mA, I

= 0

Emitter-Base Breakdown Voltage

(BR)EBO

-5

⎯ ⎯

= -100μA, I

= 0

Collector-Base Cut-off Current

CBO

⎯ ⎯

-0.25

μA

= -200V, I

= 0

Emitter-Base Cut-off Current

EBO

⎯ ⎯

-0.1

μA

= -3V, I

= 0A

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

CE(SAT)

⎯ ⎯

-0.5 V

= -20mA, I

= -2mA

Base-Emitter Saturation Voltage

BE(SAT)

⎯ ⎯

-0.9 V

= -20mA, I

= -2mA

Static Forward Current Transfer Ratio

⎯

= -1mA, V

= -10V

= -10mA, V

= -10V

= -30mA, V

= -10V

SMALL SIGNAL CHARACTERISTICS

Gain-Bandwidth Product

⎯ ⎯

MHz

= -10mA, V

= -20V,

f = 100MHz

Output Capacitance

obo

⎯ ⎯

6 pF

= -20V, f = 1MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31159 Rev. 4 - 2

1 of 4

www.diodes.com

DXTA92

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Podsumowanie treści

Strona 1 - PNP SURFACE MOUNT TRANSISTOR

DXTA92 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXTA42) • Ideally Suited fo

Strona 2 - NEW PRODUCT

Strona 3 - (Top View)

NEW PRODUCT Ordering Information (Note 5) Device Packaging Shipping DXTA92-13 SOT89-3L 2500/Tape & Reel Notes: 5. For packaging

Strona 4 - Suggested Pad Layout

Suggested Pad Layout 3.00.92.70.41.71.31.9Unit: mm NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right

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Przeglądaj online lub pobierz Instrukcja Użytkownika dla Sprzęt komputerowy Diodes DXTA92. Diodes DXTA92 User Manual Instrukcja obsługi

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