
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* 400 Volt V
CEO
*P
tot
= 1 Watt
COMPLEMENTARY TYPE – FCX558
PARTMARKING DETAIL – N58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
225 mA
Peak Pulse Current I
CM
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
400 V
I
C
=100µA
V
CEO(sus)
400 V I
C
=10mA*
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Currents I
CBO
100 nA V
CB
=320V
I
CES
100 nA V
CE
=320V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Emitter Saturation Voltages V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
V
BE(sat)
0.9 V I
C
=50mA, I
B
=5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9 V I
C
=50mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V**
Transition Frequency f
T
50 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5pFV
CB
=20V, f=1MHz
Switching times t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
C
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
FCX458
3 - 85
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