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AP7217D

1.2V 600mA CMOS LDO

AP7217D Rev. 2 4 of 9 FEBRUARY 2009

www.diodes.com © Diodes Incorporated

Electrical Characteristics

= 25°C, C

= 1µF, C

OUT

= 1µF, V

=5V, unless otherwise noted)

Symbol Parameter Test Conditions Min Typ. Max Unit

Quiescent Current I

= 0mA - 40 60 μA

OUT

Output Voltage

Accuracy

= 30mA 1.176 1.2 1.224 V

OUT

Temperature

Coefficient

-40°C to 85°C, I

OUT

= 30mA

±100

- ppm /

DROPOUT

Dropout Voltage I

OUT

= 600mA, V

OUT

= 1.2V - 850 1300 mV

OUT

Maximum Output

Current

600 - - mA

LIMIT

Current Limit - 850 - mA

SHORT

Short Circuit Current - 200 - mA

ΔV

LINE

Line Regulation 2.5V ≤ V

≤ 5.5V; I

OUT

= 30mA - 0.2 - %/V

ΔV

LOAD

Load Regulation

(Note 4)

1mA ≤ I

OUT

≤ 300mA 15 35 mV

1mA ≤ I

OUT

≤ 600mA 30 55 mV

PSRR

Power Supply

Rejection

= 4.3V+0.5Vp-pAC,

OUT

= 50mA

F = 1KHz - 55 - dB

Thermal Shutdown

Temperature

- 150 - ºC

Thermal Shutdown

Hysteresis

- 30 - ºC

Thermal Resistance

Junction-to-Ambient

SOT89-3L (Note 5) - 173 - ºC/W

Thermal Resistance

Junction-to-Case

SOT89-3L (Note 5) - 51 - ºC/W

Notes: 4. Regulation is measured at constant junction temperature by low duty cycle pulse testing.

5. Test condition for SOT89-3L: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with minimum recommended pad layout,

no air flow.

Typical Application

1 2 3 4 5 6 7 8 9

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