Diodes 2N7002T Instrukcja Użytkownika Pobierz pdf (Strona 3)

2N7002T

Document number: DS30301 Rev. 14 - 2

3 of 5

www.diodes.com

April 2012

© Diodes Incorporated

2N7002T

012

3

4

5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

DS

0.2

0.1

0.4

0.3

0.5

0.6

0.7

0.8

0.9

I, D

R

AI

N

-S

O

U

R

C

E

C

U

R

R

E

N

T

(A)

D

1.0

0

V = 2.5V

GS

V = 3.0V

GS

V = 4.0V

GS

V = 5.0V

GS

V = 6.0V

GS

V = 7.0V

GS

V = 10V

GS

1

2

3

4

5

00.2

I , DRAIN-SOURCE CURRENT (A)

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Current

D

0.4

0.6

0.8

1.0

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E

DS(ON)

()

Ω

V = 3.0V

GS

V = 4.0V

GS

V = .0V

GS

6

V = .0V

GS

7

V = V

GS

10

V = 5.0V

GS

0.5

1.5

2.5

0

1.0

2.0

-50 -25

0

25

50 75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 3 Gate Threshold Variation with Temperature

J

°

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(th)

I = 250µA

D

0.5

1.5

2.5

R

D

R

AI

N

-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

,

0

1.0

2.0

3.0

-50

-25 0

25 50

75

100 125 150

T , JUNCTION TEMPERATURE ( C)

Fig. 4 On-Resistance Variation with Temperature

J

°

V = 10V

I = 500mA

GS

D

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 5 Typical Capacitance

DS

0

10

20

30

50

40

60

C

,

C

A

P

A

C

I

T

A

N

C

E (p

F

)

C

iss

C

oss

C

rss

f = 1MHz

0

2

468

10

V , GATE-SOURCE VOLTAGE (V)

Fig. 6 On-Resistance vs. Gate-Source Voltage

GS

0

0.5

2.0

3.0

2.5

4.5

4.0

3.5

5.0

R

D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E

DS(ON),

()

Ω

1.5

1.0

I = 50mA

D

1 2 3 4 5

Komentarze do niniejszej Instrukcji

Brak uwag