Diodes DMN30H4D0L Instrukcja Użytkownika Pobierz pdf (Strona 4)

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

4 of 6

www.diodes.com

February 2014

DMN30H4D0L

NEW PRODUCT

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature



, D

-S

ESIS

E ( )

DS(ON)



V=5V

I = 200mA

V=V

I = 300mA

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature



LD V

E (V)

GS(th)

0.5

1.5

2.5

I= 1mA

I = 250µA

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

I, S

(A)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 0.3 0.6 0.9 1.2 1.5

T = 150°C

T = 125°C

T= 85°C

T= -55°C

T= 25°C

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

1,000

, J

E (pF)

0 5 10 15 20 25 30 35 40

100

iss

f = 1MHz

oss

rss

Q(nC)

, TOTAL GATE CHARGE

Figure 11 Gate Charge

LD V

E (V)

012345678

V = 192V

I= A

0.5

0.001

0.01

0.1

0.1 1 10 100 1000

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

-I , D

AIN

(A)

Limited

DS(on)

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

T = 150°C

T = 25°C

J(max)

V = 4.5V

Single Pulse

DUT on 1 * MRP Board

1 2 3 4 5 6

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