Diodes ZXMN6A09G Instrukcja Użytkownika

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Issue 3 - June 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
Ordering information
Device marking
ZXMN
6A09
V
(BR)DSS
R
DS(on)
() I
D
(A)
60
0.040 @ V
GS
= 10V 7.5
0.060 @ V
GS
= 4.5V 6.2
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A09GTA 7 12 1000
D
S
G
D
Pinout - top view
S
D
G
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Podsumowanie treści

Strona 1 - ZXMN6A09G

Issue 3 - June 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryDescriptionThis new gene

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ZXMN6A09GIssue 3 - June 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x 25

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ZXMN6A09GIssue 3 - June 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Characteristics

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ZXMN6A09GIssue 3 - June 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated)Paramete

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ZXMN6A09GIssue 3 - June 2007 5 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristics

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ZXMN6A09GIssue 3 - June 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristicsCurrentregulatorChargeGate charge test circuitSwitch

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ZXMN6A09GIssue 3 - June 2007 7 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT223Note: Controlling dimensions are in millimeters. Ap

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ZXMN6A09GIssue 3 - June 2007 8 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541 Mün

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