Diodes ZXMP3A16DN8 Instrukcja Użytkownika

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SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.045 ;I
D
= -5.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
DEVICE MARKING
ZXMP
3A16
ZXMP3A16DN8
ISSUE 2 - MAY 2007
1
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16DN8TA 7
’‘ 12mm 500 units
ZXMP3A16DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
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Podsumowanie treści

Strona 1 - ZXMP3A16DN8

SUMMARYV(BR)DSS= -30V; RDS(ON)= 0.045 ;ID= -5.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines t

Strona 2

ZXMP3A16DN8ISSUE 2 - MAY 20072PARAMETER SYMBOL VALUE UNITJunction to Ambient(a)(d)RθJA100 °C/WJunction to Ambient(b)(e)RθJA70 °C/WJunction to Ambient(

Strona 3

ZXMP3A16DN8ISSUE 2 - MAY 20073100m 1 1010m100m110Single PulseTamb=25°COne active dieRDS(on)Limited100µs1ms10ms100ms1sDCSafe Operating Area-IDDrain Cur

Strona 4

ZXMP3A16DN8ISSUE 2 - MAY 20074PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-Source Breakdown Voltage V(BR)DSS-30 VID=-250μA, VGS=0VZero G

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ZXMP3A16DN8ISSUE 2 - MAY 200750.1 1 100.010.11100.1 1 100.010.11101230.1110-50 0 50 100 1500.40.60.81.01.21.41.60.01 0.1 1 100.010.11101000.0 0.2 0.4

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ZXMP3A16DN8ISSUE 2 - MAY 20076

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ZXMP3A16DN8ISSUE 2 - MAY 20077DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price

Strona 8

ZXMP3A16DN8ISSUE 2 - MAY 20078EuropeZetex GmbHKustermann-ParkBalanstraße 59D-81541 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49eu

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