Diodes BAS40LP Instrukcja Użytkownika Pobierz pdf (Strona 2)

BAS40LP

Document number: DS30503 Rev. 13 - 2

2 of 5

www.diodes.com

November 2013

BAS40LP

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

40 V

Forward Continuous Current

200 mA

Repetitive Peak Forward Current (note 6) I

FRM

800 mA

Non-Repetitive Peak Forward Surge Current @ tp = 1.0s (note 7)

FSM

1000 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation

250 mW

Thermal Resistance, Junction to Ambient Air

θJA

400

C/W

Operating Temperature Range

-55 to +125

C

Storage Temperature Range

STG

-65 to +150

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

(

)

40 — — V

= 10μA

Forward Voltage (Note 3)

— —

380

1000

< 300μs, I

= 1.0mA

< 300μs, I

= 40mA

Reverse Leakage Current (Note 5)

— 20 200 nA

< 300μs, V

= 30V

Total Capacitance

— 2.3 5.0 pF

= 0V, f =1.0MHz

Reverse Recovery Time

— — 5.0 ns

= I

= 10mA to I

= 1.0mA,

= 100Ω

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Repetitive peak forward current was tested with with tp ≤1s and ∂ ≤ 0.8 square wave

7. Non-repetitive peak forward current was tested with tp=1s square wave

0.01

0.1

0.001

0.0001

1.0

0.6

0.8

0.40.2

I, I

(A)

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Typical Forward Voltage

0.1

100

1,000

10,000

10 20

30 40

V , INSTANTANEOUS REVERSE VOLTAGE (V)

Fig. 2 Typical Reverse Characteristics

I, I

STA

EVE

T (nA)

1 2 3 4 5

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