Diodes DMN66D0LDW Instrukcja Użytkownika Pobierz pdf

DMN66D0LDW

Document number: DS31232 Rev. 6 - 2

1 of 5

www.diodes.com

February 2014

DMN66D0LDW

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

Package

= +25°C

60V

6Ω @ V

= 5V

SOT363

90mA

5Ω @ V

= 10V

115mA

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Load Switch

Features and Benefits

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1KV (HBM)

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN66D0LDW-7 SOT363 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View

Internal Schematic

MN1

ESD PROTECTED TO 1kV

MN1= Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

MN1

1 2 3 4 5

DMN66D0LDW 1
NEW PRODUCT 3

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Strona 1 - DMN66D0LDW

DMN66D0LDW Document number: DS31232 Rev. 6 - 2 1 of 5 www.diodes.com February 2014© Diodes Incorporated DMN66D0LDWNEW PRODUCT DUAL N-CHANNEL ENHA

Strona 2

DMN66D0LDW Document number: DS31232 Rev. 6 - 2 2 of 5 www.diodes.com February 2014© Diodes Incorporated DMN66D0LDWNEW PRODUCT Maximum Ratings

Strona 3 - NEW PRODUCT

DMN66D0LDW Document number: DS31232 Rev. 6 - 2 3 of 5 www.diodes.com February 2014© Diodes Incorporated DMN66D0LDWNEW PRODUCT 00.10.20.30.40.5

Strona 4

DMN66D0LDW Document number: DS31232 Rev. 6 - 2 4 of 5 www.diodes.com February 2014© Diodes Incorporated DMN66D0LDWNEW PRODUCT Fig. 7 Reverse

Strona 5

DMN66D0LDW Document number: DS31232 Rev. 6 - 2 5 of 5 www.diodes.com February 2014© Diodes Incorporated DMN66D0LDWNEW PRODUCT IMPORTANT NOTICE

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