Diodes DMP2004TK Instrukcja Użytkownika Pobierz pdf (Strona 2)

DMP2004TK

Document number: DS30932 Rev. 5 - 2

2 of 5

www.diodes.com

August 2012

DMP2004T

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±8 V

Drain Current (Note 5) Steady

State

= +25°C

= +85°C

-430

-310

Pulsed Drain Current (Note 6)

-750 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

150 mW

Thermal Resistance, Junction to Ambient

833 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

-20

⎯ ⎯

= 0V, I

= -250μA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

-1.0

μA

= -20V, V

= 0V

Gate-Source Leakage

GSS

⎯ ⎯

±1.0 μA

= ±4.5V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

-0.5

⎯

-1.0 V

= V

, I

= -250μA

Static Drain-Source On-Resistance

DS (ON)

⎯

0.7

1.1

1.7

1.1

1.6

2.4

= -4.5V, I

= -430mA

= -2.5V, I

= -300mA

= -1.8V, I

= -150mA

Forward Transfer Admittance

200

⎯ ⎯

=10V, I

= 0.2A

Diode Forward Voltage (Note 7)

⎯ ⎯

-1.4 V V

= 0V, I

= -115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯ ⎯

175 pF

= -16V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

⎯ ⎯

30 pF

Reverse Transfer Capacitance

rss

⎯ ⎯

20 pF

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10μS, Duty Cycle ≤1%

7. Short duration pulse test used to minimize self-heating effect.

1 2 3 4 5

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