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DSS3540M
Document number: DS31821 Rev. 2 - 2
2 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS3540M
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current - Continuous
I
C
-500 mA
Peak Pulse Collector Current
I
CM
-1 A
Peak Base Current
I
BM
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25°C P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
R
θ
JA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
Fig. 1 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 500°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
0.1
1
10
100
1,000
1E-06 0.0001 0.01 1 100 10,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
P(pk), PEAK T
R
ANSIENT P
O
WE
R
(W)
Single Pulse
T - T = P * R (t)
JA JA
θ
R (t) = r(t) *
θ
JA
R
R = 500°C/W
θ
θ
JA
JA
0
0.05
0.10
0.15
0.30
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
R = 500°C/W
θ
JA
0.20
0.25
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