Diodes FCX1051A Instrukcja Użytkownika

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Issue 2 - July 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
FCX1051A
SOT89 NPN medium power transistor
Summary
BV
CEO
> 40V
I
C(cont)
= 3A
V
CE(sat)
< 120mV @ 1A
R
CE(sat)
= 57m
P
D
= 2W
Complimentary type - FCX1151A
Description
An NPN low voltage, high gain bipolar transistor offering very low
saturation voltage and excellent current handling in the SOT89
package.
Features
Very low saturation voltage
•High gain
Small outline package
Applications
Motor drive
•Strobe flash
MOSFET and IGBT gate driving
DC -DC converters
Ordering information
Device mark
051
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
FCX1051ATA 7 12 1,000
C
E
B
C
E
Pinout - top view
C
B
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Podsumowanie treści

Strona 1 - FCX1051A

Issue 2 - July 2007 1 www.zetex.com© Zetex Semiconductors plc 2007FCX1051ASOT89 NPN medium power transistorSummaryBVCEO > 40VIC(cont) = 3AVCE(sat)

Strona 2

FCX1051AIssue 2 - July 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) Measured under pulsed conditions. Pulse wi

Strona 3

FCX1051AIssue 2 - July 2007 3 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (@ Tamb = 25°C unless otherwise stated)Parameter

Strona 4

FCX1051AIssue 2 - July 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristics1m1m1m1m1mIC- Collector Current (A)VCE(sat) - (V)VCE(

Strona 5

FCX1051AIssue 2 - July 2007 5 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT89Note: Controlling dimensions are in millimeters. Appr

Strona 6

FCX1051AIssue 2 - July 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541 Münc

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