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SEMICONDUCTORS

FMMT493A

ISSUE 2 - AUGUST 2003

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector - Base

Breakdown Voltage

(BR)CBO

120 V I

= 100␮A

Collector - Emitter

Breakdown Voltage

CEO(SUS)

60 V I

= 10mA*

Emitter - Base

Breakdown Voltage

(BR)EBO

5VI

= 100␮A

Collector Cut-Off Current I

CBO

100 nA V

= 45V

Collector Cut-Off Current I

CES

100 nA V

CES

= 45V

Emitter Cut-Off Current I

EBO

100 nA V

=4V

Collector - Emitter

Saturation Voltage

CE(SAT)

0.25

0.5

= 500mA, I

= 50mA

= 1A, I

= 100mA

Base - Emitter Saturation

Voltage

BE(SAT)

1.15 V I

=1A, I

= 100mA

Base Emitter Turn On

Voltage

BE(ON)

1.0 V I

= 1A, V

- 10V

Static Forward Current

Transfer Ratio

300

500

300

100

1200

=1mA,V

= 10V

= 150mA, V

= 10V

= 250mA, V

= 10V

= 500mA, V

= 10V

= 1A, V

= 10V

Transition Frequency f

150 Mhz I

= 50mA, V

= 10V

f = 100MHz

Output Capacitance C

OBO

10 pF V

= 10V, f = 1MHz

ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).

*Measured under pulsed conditions. Pulse width = 300␮s. Duty Cycle <2%

1 2 3 4 5 6

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