Diodes ZXMN6A11G Instrukcja Użytkownika Pobierz pdf (Strona 2)

ZXMN6A11G

Document number: DS33556 Rev. 5 - 2

2 of 8

www.diodes.com

October 2010

ZXMN6A11G

Product Line o

Diodes Incorporated

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

Gate-Source Voltage

±20

Continuous Drain Current

= 10V

(Note 3)

= 70°C (Note 3)

(Note 2)

4.4

3.5

3.1

Pulsed Drain Current

= 10V

(Note 4)

15.6

Continuous Source Current (Body Diode) (Note 3)

Pulsed Source Current (Body Diode) (Note 4)

15.6

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation

Linear Derating Factor

(Note 2)

2.0

mW/°C

(Note 3)

3.9

Thermal Resistance, Junction to Ambient

(Note 2)

JA

62.5

°C/W

(Note 3) 32.0

Thermal Resistance, Junction to Lead (Note 5)

JL

9.8

Operating and Storage Temperature Range

STG

-55 to +150 °C

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t  10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

1 2 3 4 5 6 7 8

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