Diodes ZXMN7A11G Instrukcja Użytkownika Pobierz pdf (Strona 1)

Issue 1 - March 2006 1 www.zetex.com

ZXMN7A11G

70V N-channel enhancement mode MOSFET

Summary

DSS

=70V : R

DS(on)

=0.13⍀

=3.8A

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low voltage

power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT223 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

• Class D audio output stages

Ordering information

Device marking

ZXMN

7A11

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN7A11GTA 7 12 1,000

ZXMN7A11GTC 13 12 4,000

1 2 3 4 5 6 7 8

ZXMN7A11G 1

Podsumowanie treści

Strona 1 - ZXMN7A11G

Issue 1 - March 2006 1 www.zetex.com© Zetex Semiconductors plc 2006ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13⍀ ID=3

Strona 2

ZXMN7A11GIssue 1 - March 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x 2

Strona 3

Strona 4

ZXMN7A11GIssue 1 - March 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)Paramet

Strona 5

Strona 6

Strona 7

Strona 8

ZXMN7A11GIssue 1 - March 2006 8 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex products