DMN6075S
Document number: DS37023 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN6075S
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.0
1.5
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.5
2.0
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
12 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.8
W
T
A
= +70°C
0.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
157 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.15
W
T
A
= +70°C
0.7
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
110 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 — 3 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
—
69 85
m
V
GS
= 10V, I
D
= 3.2A
75 120
V
GS
= 4.5V, I
D
= 2.8A
Diode Forward Voltage
V
SD
—
— 1.2 V
V
GS
= 0V, I
S
= 2.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 606
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 32.6 — pF
Reverse Transfer Capacitance
C
rss
—
24.6
—
pF
Gate Resistance
R
g
—
1.5
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
=10V) Q
g
— 12.3 — nC
V
DS
= 30V, I
D
= 3A
Total Gate Charge (V
GS
=4.5V) Q
g
—
5.6
—
nC
Gate-Source Charge
Q
gs
—
1.7
—
nC
Gate-Drain Charge
Q
gd
— 1.9 — nC
Turn-On Delay Time
t
D(on)
—
3.5
—
ns
V
GS
= 10V, V
DS
= 30V,
R
G
= 20, R
L
= 50
Turn-On Rise Time
t
r
—
4.1
—
ns
Turn-Off Delay Time
t
D(off)
— 35 — ns
Turn-Off Fall Time
t
f
—
11
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
(6 strony)
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